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KF10N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supplies. + A 9.9 0.2 B B 15.95 MAX Q C 1.3+0.1/-0.05 _ FEATURES I + D 0.8 0.1 _ E 3.6 + 0.2 VDSS=600V, ID=10A K _ P F 2.8 0.1 + Drain-Source ON Resistance 3.7 G M L 0.5+0.1/-0.05 H RDS(ON)(Max)=0.73 @VGS=10V J 1.5 I Qg(typ.)= 29.5nC D _ + J 13.08 0.3 1.46 H K N N _ L 1.4 0.1 + MAXIMUM RATING (Tc=25 ) _ M 1.27 0.1 + _ N 2.54 0.2 + RATING _ O 4.5 0.2 + CHARACTERISTIC SYMBOL UNIT _ P 2.4 0.2 + 1 2 3 1. GATE KF10N60P KF10N60F _ 2. DRAIN ... See More ⇒

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