View kf10n60p-f datasheet:

KF10N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF10N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supplies. +A 9.9 0.2BB 15.95 MAXQC 1.3+0.1/-0.05_FEATURES I+D 0.8 0.1_E 3.6 + 0.2VDSS=600V, ID=10AK _P F 2.8 0.1+Drain-Source ON Resistance : 3.7GML0.5+0.1/-0.05HRDS(ON)(Max)=0.73 @VGS=10VJ1.5IQg(typ.)= 29.5nC D _+J 13.08 0.31.46H KN N_L 1.4 0.1+MAXIMUM RATING (Tc=25) _M 1.27 0.1+_N 2.54 0.2+RATING _O 4.5 0.2+CHARACTERISTIC SYMBOL UNIT_P 2.4 0.2+1 2 3 1. GATEKF10N60P KF10N60F_2. DRAIN

Keywords - ALL TRANSISTORS DATASHEET

 kf10n60p-f.pdf Design, MOSFET, Power

 kf10n60p-f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 kf10n60p-f.pdf Database, Innovation, IC, Electricity