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SEMICONDUCTOR KTD882 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTB772. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO Collector-Base Voltage 40 V _ + F 11.0 0.3 G 2.9 MAX VCEO Collector-Emitter Voltage 30 V M H 1.0 MAX J 1.9 MAX VEBO Emitter-Base Voltage 5 V O + _ K 0.75 0.15 N P _ + L 15.5 0.5 1 2 3 IC _ DC 3 + M 2.3 0.1 _ + Collector Current A N 0.65 0.15 ICP Pulse (Note) 7 O 1.6 1. EMITTER P 3.4 MAX 2. COLLECTOR IB Base Current (DC) 0.6 A 3. BASE 1.5 Ta=25 Collector Power PC W Dissipation TO-126 10 Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note Pulse Width 10mS, Duty Cycle 50%. ELECTRICAL CHARACT... See More ⇒

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