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View mje13004d detailed specification:

SEMICONDUCTOR MJE13004D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B D HIGH VOLTAGE AND HIGH SPEED C SWITCHING APPLICATION. E F FEATURES G Built-in Free Wheeling Diode H Suitable for Electrouic Ballast Application DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 MAXIMUM RATING (Ta=25 ) _ + F 11.0 0.3 G 2.9 MAX CHARACTERISTIC SYMBOL RATING UNIT M H 1.0 MAX J 1.9 MAX O + _ VCBO K 0.75 0.15 Collector-Base Voltage 700 V N P _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 400 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 4 Collector Current A ICP Pulse 8 TO-126 IB Base Current 2 A Collector Power Dissipation PC 30 W (Tc=25 ) Equivalent Circuit Tj Junction Temperature 150 C Tst... See More ⇒

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