View 2n7002 detailed specification:
SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 Features 3 High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable 1 2 High saturation current capability +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Drain-source breakdown voltage VDSS VGS=0 V, ID=10 0 A 60 V Zero gate voltage drain current IDSS VDS=60 V, VGS=0 V 80 nA Gate-body leakage lGSS VDS=0 V, VGS= 25 V 80 nA Gate-threshold voltage VGS(th) VDS=VGS, ID=250 A 1 2... See More ⇒
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2n7002.pdf Design, MOSFET, Power
2n7002.pdf RoHS Compliant, Service, Triacs, Semiconductor
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