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View 2sa1813 detailed specification:

SMD Type Transistors PNP Transistors 2SA1813 Features High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage High VEBO 1 Base 2 Emitter 3 Colletor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -15 Collector Current - Continuous IC -150 mA Collector Current - Pulse ICM -300 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA RBE= -25 V Emitter - base breakdown voltage VEBO IE= -100 uA IC=0 -15 Collector-bas... See More ⇒

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