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KBT5551C NPN Silicon Transistor 2018.03 02 2018.03 02 2018.03 02 2018.03 02 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose amplifier High voltage application PIN Connection Features High collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Complementary pair with KBT5401C Ordering Information Type NO. Marking Package Code FNF KBT5551C SOT-23 Device Code Year& Week Code Dalian Absolute maximum ratings Ta=25 C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emi... See More ⇒

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