View kbt5551c datasheet:

KBT5551C NPN Silicon Transistor 2018.0302 2018.0302 2018.0302 2018.0302 1 000 2018.03.02 AUK Dalian 1 KBT5551C NPN Silicon Transistor Descriptions General purpose amplifier High voltage application PIN Connection Features High collector breakdown voltage: VCBO = 180V, VCEO = 160V Low collector saturation voltage: VCE(sat)=0.5V(MAX.) Complementary pair with KBT5401C Ordering Information Type NO. Marking Package Code FNF KBT5551C SOT-23 Device Code Year& Week Code Dalian Absolute maximum ratings Ta=25C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emi

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