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View a1015 to-92 detailed specification:

A1015 Transistor(PNP) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100 A, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 A, IC=0 -5 V Collector cut-off current ICBO VCB= -50V,IE=0 -0.1 A Collector cut-off current I... See More ⇒

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