View a1015 to-92 datasheet:

A1015Transistor(PNP)TO-921.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PD Collector Power Dissipation 400 mW Tj Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -50 VCollector-emitter breakdown voltage V(BR)CEO IC= -0. 1mA, IB=0 -50 VEmitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 VCollector cut-off current ICBO VCB= -50V,IE=0 -0.1 A Collector cut-off current I

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