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BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC= 100uA, IE=0 BC337 50 V BC338 30 V Collector-emitter breakdown voltage IC= 10mA , IB=0 BC337 VCEO 45 V BC338 25 V Emitter-base breakdown voltage VEBO IE= 10uA, IC=0 5 V Coll... See More ⇒

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