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BSS138 SOT-23 Plastic-Encapsulate NMOSFETS ID SOT-23 V(BR)DSS RDS(on)MAX 3.5 @10V 50 V 220mA 1. GATE 6 @4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION Direct Logic-Level Interface TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Continuous Gate-Source Voltage VGSS 20 Continuous Drain Current ID 0.22 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient R JA 357 /W Operating Temperature Tj 150 Storage Temperature Tstg -55 +150 http //www.lgesemi.com mail lge@lgesemi.com Revision 20170701-P1 BSS138 ELECTRICAL C... See More ⇒

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