View bss138 datasheet:

BSS138 SOT-23 Plastic-Encapsulate NMOSFETS ID SOT-23 V(BR)DSS RDS(on)MAX 3.5@10V50V220mA1. GATE6@4.5V2. SOURCE3. DRAINFEATURE APPLICATION Direct Logic-Level Interface: TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 50V Continuous Gate-Source Voltage VGSS 20 Continuous Drain Current ID 0.22 APower Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RJA 357 /W Operating Temperature Tj 150 Storage Temperature Tstg -55 ~+150http://www.lgesemi.commail:lge@lgesemi.comRevision:20170701-P1BSS138 ELECTRICAL C

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