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View d882 to-126 detailed specification:

D882(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Power dissipation 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage 40 V 11.000 0.300 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V 2.100 2.300 IC Collector Current -Continuous 3 A 1.170 1.370 PD Collector Power Dissipation 1.25 W Dimensions in inches and (millimeters) 15.300 TJ Junction Temperature 150 15.700 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) 0.660 0.860 0.450 Parameter Symbol Test conditions MIN TYP MAX UNIT 0.600 2.290 TYP 4.480 Collector-base breakdown voltage V(BR)CBO IC = 100 A, IE=0 40 V 4.680 Collecto... See More ⇒

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