All Transistors. Datasheet

 

View d882 to-126 datasheet:

d882_to-126d882_to-126

D882(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Power dissipation 2.5007.4002.9001.1007.800 1.500MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.9003.0004.100Symbol Parameter Value Units3.20010.6000.000VCBO Collector-Base Voltage 40 V 11.0000.300VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V 2.1002.300IC Collector Current -Continuous 3 A 1.1701.370PD Collector Power Dissipation 1.25 W Dimensions in inches and (millimeters)15.300TJ Junction Temperature 150 15.700Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) 0.6600.8600.450 Parameter Symbol Test conditions MIN TYP MAX UNIT0.6002.290 TYP4.480Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V4.680Collecto

 

Keywords - ALL TRANSISTORS DATASHEET

 d882 to-126.pdf Design, MOSFET, Power

 d882 to-126.pdf RoHS Compliant, Service, Triacs, Semiconductor

 d882 to-126.pdf Database, Innovation, IC, Electricity

 

 
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