View 3cg1160 detailed specification:
2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash,medium power amplifier applications. , Features High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -20 V CBO V -10 V CEO V -6.0 V EBO I -2.0 A C I -4.0 A CP I -2.0 A B P 900 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =-10mA I =0 -10 V CEO C B V I =-1.0mA I =0 -6.0 V EBO E C I V =-20V I =0 -0.1 A CBO CB E I V =-6.0V I =0 -0.1 ... See More ⇒
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3cg1160.pdf Design, MOSFET, Power
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