3cg1160.pdf datasheet:

2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash,medium power amplifier applications. , Features: High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -20 V CBO V -10 V CEO V -6.0 V EBO I -2.0 A C I -4.0 A CPI -2.0 A BP 900 mW CT 150 j T -55150 stg /Electrical characteristics(Ta=25) Rating Symbol Test condition Unit Min Typ Max V I =-10mA I =0 -10 V CEO C BV I =-1.0mA I =0 -6.0 V EBO E CI V =-20V I =0 -0.1 A CBO CB EI V =-6.0V I =0 -0.1