View mbq50t65fdsc detailed specification:
MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25 C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F This device is for PFC, UPS & Inverter applications. Maximum junction temperature 175 C Applications PFC Welder UPS IH Cooker PV Inverter TO-247 G C E Maximum Rating Parameter Symbol Rating Unit Collector-emitter voltage V 650 V CE T =25 C 100 A C DC collector current, limited by T I vjmax C T =100 C 50 A C Pulsed collector current, t limited by T I 200 A p jvjmax Cpuls Turn off safe operating area V 65... See More ⇒
Keywords - ALL TRANSISTORS SPECS
mbq50t65fdsc.pdf Design, MOSFET, Power
mbq50t65fdsc.pdf RoHS Compliant, Service, Triacs, Semiconductor
mbq50t65fdsc.pdf Database, Innovation, IC, Electricity
