View mbq50t65fdsc datasheet:

MBQ50T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.95V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching Eoff = 0.37mJ @ TC = 25C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr FThis device is for PFC, UPS & Inverter applications. Maximum junction temperature 175C Applications PFC Welder UPS IH Cooker PV Inverter TO-247 G C E Maximum Rating Parameter Symbol Rating Unit Collector-emitter voltage V 650 V CE T =25C 100 A C DC collector current, limited by T I vjmax C T =100C 50 A C Pulsed collector current, t limited by T I 200 A p jvjmax Cpuls Turn off safe operating area V 65

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