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View mbq50t65fesc detailed specification:

MBQ50T65FESC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F This device is for PFC, UPS & Inverter applications. Maximum junction temperature 175 C Applications PFC Welder UPS IH Cooker PV Inverter TO-247 G C E Maximum Rating Parameter Symbol Rating Unit Collector-emitter voltage V 650 V CE T =25 C 100 A C DC collector current, limited by Tvjmax IC T =100 C 50 A C Pulsed collector current, t limited by T I 200 A p jvjmax Cpuls Turn off safe operating area V 6... See More ⇒

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