View mbq50t65fesc datasheet:

MBQ50T65FESC 650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 1.85V @ I = 50A CE(sat) C Stop Trench IGBT Technology, which provides high switching E = 0.55mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr FThis device is for PFC, UPS & Inverter applications. Maximum junction temperature 175C Applications PFC Welder UPS IH Cooker PV Inverter TO-247 G C E Maximum Rating Parameter Symbol Rating Unit Collector-emitter voltage V 650 V CE T =25C 100 A C DC collector current, limited by Tvjmax IC T =100C 50 A C Pulsed collector current, t limited by T I 200 A p jvjmax Cpuls Turn off safe operating area V 6

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