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View slp60r190s2 slf60r190s2 detailed specification:

SLP60R190S2/SLF60R190S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 600V, RDS(on)typ= 0.16 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 39nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, and withstand high energy pulse in the - 100% avalanche tested avalanche and commutation mode. LEAD FREE - Improved dv/dt capability - Improved dv/dt capability Th d i ll it d f AC/DC i These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Pb RoHS D TO-220 TO-220F G G D S G D S S Absolute Maximum Ratings TC = 25 C unless otherwise noted g C Symbol Parameter SLP60R190S2 SLF60R190S2 Units VDSS Drain-Source Volt... See More ⇒

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