View slp60r190s2 slf60r190s2 datasheet:

SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, and withstand high energy pulse in the- 100% avalanche testedavalanche and commutation mode.LEAD FREE- Improved dv/dt capability- Improved dv/dt capabilityTh d i ll it d f AC/DC iThese devices are well suited for AC/DC power conversionin switching mode operation for higher efficiency.PbRoHSD TO-220 TO-220F G G D SG D SSAbsolute Maximum Ratings TC = 25C unless otherwise notedgCSymbol Parameter SLP60R190S2 SLF60R190S2 UnitsVDSS Drain-Source Volt

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