View 2n5400 2n5401 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Silicon * 2N5401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 120 150 Vdc Collector Base Voltage VCBO 130 160 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 Watts Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERI... See More ⇒

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