2n5400 2n5401.pdf datasheet:
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5400/DAmplifier Transistors2N5400PNP Silicon*2N5401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5400 2N5401 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 120 150 VdcCollectorBase Voltage VCBO 130 160 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WattsDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case RqJC 83.3 C/WELECTRICAL CHARACTERI
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2n5400 2n5401.pdf Design, MOSFET, Power
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