View bc556 bc557 bc558 detailed specification:
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 65 45 30 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 80 50 30 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 Watt Derate above 25 C 12 mW/ C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECT... See More ⇒
Keywords - ALL TRANSISTORS SPECS
bc556 bc557 bc558.pdf Design, MOSFET, Power
bc556 bc557 bc558.pdf RoHS Compliant, Service, Triacs, Semiconductor
bc556 bc557 bc558.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet


