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View bdx33b bdx34b detailed specification:

bdx33b_bdx34bbdx33b_bdx34b

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BDX34C* VCEO(sus) = 100 Vdc (min.) BDX33C, 34C Low Collector Emitter Saturation Voltage *Motorola Preferred Device VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C Monolithic Construction with Build In Base Emitter Shunt resistors DARLINGTON TO 220AB Compact Package 10 AMPERE COMPLEMENTARY ... See More ⇒

 

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