View mrf182re detailed specification:
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line RF Power MRF182 Field Effect Transistors MRF182S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 30 WATTS, 1.0 GHz, Broadband Performance from HF to 1 GHz 28 VOLTS LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND RF Mode Inductances POWER MOSFET D CASE 360B 01, STYLE 1 G S CASE 360C 02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS 20 Vdc Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C Total Device Dissipation @ TC = 25 C PD 117 W Derate above 25 C 0.67 W/ C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 1.5 C/W ELEC... See More ⇒
Keywords - ALL TRANSISTORS SPECS
mrf182re.pdf Design, MOSFET, Power
mrf182re.pdf RoHS Compliant, Service, Triacs, Semiconductor
mrf182re.pdf Database, Innovation, IC, Electricity
