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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line MRF184 RF POWER Field-Effect Transistors MRF184S N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them ideal for large signal, common source amplifier applications in 28 LATERAL N CHANNEL volt base station equipment. BROADBAND RF POWER MOSFETs Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% Characterized with Series Equivalent Large Signal D Impedance Parameters S Parameter Characterization at High Bias Levels CASE 360B 01, STYLE 1 Excellent Thermal Stability (MRF184) Capable of Handling 30 1 VSWR @ 28 Vdc, 945 MHz G CAS... See More ⇒

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