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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS N Channel Enhancement Mode Lateral MOSFET LATERAL N CHANNEL BROADBAND High Gain, Rugged Device RF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D G S (FLANGE) G D CASE 375B 02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS 20 Vdc Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C Total Device Dissipation @ TC = 25 C PD 250 Watts Derate above 25 C 1.45 W/ C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 0.7 C/W ELEC... See More ⇒

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