View mtu18n50e datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTU18N50E/D Designer's Data Sheet MTU18N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 18 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time. In addition, this advanced TMOS RDS(on) = 0.31 OHM E FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and... See More ⇒

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