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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTU18N50E/DDesigner's Data SheetMTU18N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination18 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time. In addition, this advanced TMOSRDS(on) = 0.31 OHMEFET is designed to withstand high energy in the avalanche andcommutation modes. This new energy efficient design also offers adraintosource diode with a fast recovery time. Designed for highvoltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularlywell suited for bridge circuits where diode speed and commutatingsafe operating areas are critical and

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