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View irf630h detailed specification:

RoHS IRF630 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (9A, 200Volts) DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. D They are designed, tested and guaranteed to withstand D level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers G D and drivers for high power bipolar switching transistors G S requiring high speed and low gate drive power. DS These transistors can be operated directly from integrated circuits. TO-220AB TO-263(D2PAK) (IRF630A) (IRF630H) FEATURES RDS(ON) = 0.40 @ VGS = 10V Ultra low gate charge(43nC max.) Low reverse transfer capacitance (CRSS = 80pF typical) Fast switch... See More ⇒

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