View irf630h datasheet:

RoHS IRF630 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(9A, 200Volts)DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.D They are designed, tested and guaranteed to withstand Dlevel of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applicationssuch as switching regulators, convertors, motor drivers GDand drivers for high power bipolar switching transistorsG Srequiring high speed and low gate drive power.DS These transistors can be operated directly from integrated circuits.TO-220AB TO-263(D2PAK) (IRF630A)(IRF630H) FEATURES RDS(ON) = 0.40 @ VGS = 10V Ultra low gate charge(43nC max.)Low reverse transfer capacitance(CRSS = 80pF typical)Fast switch

Keywords - ALL TRANSISTORS DATASHEET

 irf630h.pdf Design, MOSFET, Power

 irf630h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf630h.pdf Database, Innovation, IC, Electricity