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2N7002BKMB 60 V, single N-channel Trench MOSFET Rev. 2 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compatible Trench MOSFET technology Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - 60 V VGS gate-source voltage -20 - 20 V [1] ID drain current VGS =10V; Tamb =25 C - - 450 mA Static characteristics RD... See More ⇒

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