View 2n7002bkmb datasheet:

2N7002BKMB60 V, single N-channel Trench MOSFETRev. 2 13 June 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Logic-level compatible Trench MOSFET technology Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj = 25 C - - 60 VVGS gate-source voltage -20 - 20 V[1]ID drain current VGS =10V; Tamb =25C - - 450 mAStatic characteristicsRD

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