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View 2n5401-d detailed specification:

2N5401 Amplifier Transistors PNP Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 W Derate above 25 C 12 mW/ C TO-92 CASE 29 Operating and Storage Junction TJ, Tstg -55 to +150 C STYLE 1 Temperature Range THERMAL CHARACTERISTICS 1 1 2 2 Characteristic Symbol Max Unit 3 3 STRAIGHT LEAD BENT LEAD Thermal Resistance, Junction-to-Ambient RqJA 200 C/W BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the ... See More ⇒

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