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BC490 High Current Transistors PNP Silicon Features This is a Pb-Free Device* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector - Emitter Voltage VCEO -80 Vdc BASE Collector - Base Voltage VCBO -80 Vdc 3 Emitter - Base Voltage VEBO -4.0 Vdc EMITTER Collector Current - Continuous IC -1.0 Adc Total Device Dissipation @ TA = 25 C PD 625 mW Derate above 25 C 5.0 mW/ C Total Device Dissipation @ TC = 25 C PD 1.5 W Derate above 25 C 12 mW/ C TO-92 Operating and Storage Junction TJ, Tstg -55 to +150 C CASE 29 Temperature Range STYLE 17 THERMAL CHARACTERISTICS 1 2 Characteristic Symbol Max Unit 3 STRAIGHT LEAD Thermal Resistance, Junction-to-Ambient RqJA 200 C/W BULK PACK Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ra... See More ⇒

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