View mmbfj309lt1 mmbfj310lt1 detailed specification:
MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 318 1 STYLE 10 Characteristic Symbol Max Unit 2 Total Device Dissipation FR-5 Board, PD (Note 1) TA = 25 C 225 mW Derate above 25 C 1.8 mW/ C MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C 6x M G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stres... See More ⇒
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