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NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant 600 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source Voltage VDSS 600 V Continuous Drain Current ID 3.0 3.0 2.6 A RqJC (Note 1) Continuous Drain Current ID 1.9 1.9 1.65 A RqJC TA = 100 C (Note 1) G (1) Pulsed Drain Current, VGS IDM 12 12 10 A @ 10 V (Note 1) Power Dissipation RqJC PD 25 78 61 W S (3) Gate-to-Source Voltage VGS 30 V Single Pulse Avalanche EAS 100 mJ Energy, ID = 3.0 A ESD (HBM) Vesd 3000 V (JESD 22-A114) 4 RMS Isolation Voltage (t = VISO 4500 V 0.3 sec., R.H. 30%, 4 TA = 25 C) (Figure 17) Peak Diode Rec... See More ⇒

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