View ndf03n60z ndp03n60z ndd03n60z datasheet:

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source Voltage VDSS 600 VContinuous Drain Current ID 3.0 3.0 2.6 ARqJC(Note 1)Continuous Drain Current ID 1.9 1.9 1.65 ARqJC TA = 100C(Note 1)G (1)Pulsed Drain Current, VGS IDM 12 12 10 A@ 10 V(Note 1)Power Dissipation RqJC PD 25 78 61 WS (3)Gate-to-Source Voltage VGS 30 VSingle Pulse Avalanche EAS 100 mJEnergy, ID = 3.0 AESD (HBM) Vesd 3000 V(JESD 22-A114)4RMS Isolation Voltage (t = VISO 4500 V0.3 sec., R.H. 30%, 4TA = 25C) (Figure 17)Peak Diode Rec

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