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View ndf04n60z ndp04n60z ndd04n60z detailed specification:

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features http //onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested 600 V 2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) D (2) Parameter Symbol NDF NDP NDD Unit Drain-to-Source Voltage VDSS 600 V Continuous Drain Current RqJC ID 4.8 4.1 A (Note 1) G (1) Continuous Drain Current RqJC, ID 3.0 2.6 A TA = 100 C (Note 1) Pulsed Drain Current, IDM 20 20 A S (3) VGS @ 10V Power Dissipation RqJC PD 30 117 83 W Gate-to-Source Voltage VGS 30 V Single Pulse Avalanche EAS 120 mJ Energy, ID = 4.0 A ESD (HBM) (JESD22-A114) Vesd 3000 V RMS Isolation Voltage VISO 4500 - - V (t = 0.3 sec., R.H. 30%, TA = 25 ... See More ⇒

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 ndf04n60z ndp04n60z ndd04n60z.pdf Design, MOSFET, Power

 ndf04n60z ndp04n60z ndd04n60z.pdf RoHS Compliant, Service, Triacs, Semiconductor

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