View ndf04n60z ndp04n60z ndd04n60z datasheet:

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2)Parameter Symbol NDF NDP NDD UnitDrain-to-Source Voltage VDSS 600 VContinuous Drain Current RqJC ID 4.8 4.1 A(Note 1)G (1)Continuous Drain Current RqJC, ID 3.0 2.6 ATA = 100C (Note 1)Pulsed Drain Current, IDM 20 20 AS (3)VGS @ 10VPower Dissipation RqJC PD 30 117 83 WGate-to-Source Voltage VGS 30 VSingle Pulse Avalanche EAS 120 mJEnergy, ID = 4.0 AESD (HBM) (JESD22-A114) Vesd 3000 VRMS Isolation Voltage VISO 4500 - - V(t = 0.3 sec., R.H. 30%, TA= 25

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