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View ngb8206a detailed specification:

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 350 VOLTS Features VCE(on) = 1.3 V @ Ideal for Coil-on-Plug and Driver-on-Coil Applications IC = 10 A, VGE . 4.5 V Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits C Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or G RG Microprocessor Devices Low Saturation Voltage RGE High Pulsed Current Capability These are Pb-Free Devices E Applic... See More ⇒

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