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NGTB10N60R2DT4G IGBT www.onsemi.com 600V, 10A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V] 2,4 IGBT tf=65ns (typ) Diode VF=1.5V (typ) [IF=10A] Diode trr=90ns (typ) 5 s Short Circuit Capability 1 1 Gate 2 Collector Applications 3 Emitter 3 4 Collector General Purpose Inverter 4 Specifications DPAK Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified CASE 369C 2 1 Parameter Symbol Value Unit 3 V Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES 20 Marking Diagram A Collector Current (DC) @Tc=25 C *2 20 IC *1 A Limited by Tjmax @Tc=100 C *2 10 Collector Current (Peak) A ICP 40 Pulse width Llimited by Tjmax IO 10 A Diode Average Output Current Power Dissipation PD ... See More ⇒

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