View ngtb10n60r2dt4g datasheet:

NGTB10N60R2DT4G IGBT www.onsemi.com 600V, 10A, N-Channel Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V] 2,4 IGBT tf=65ns (typ) Diode VF=1.5V (typ) [IF=10A] Diode trr=90ns (typ) 5s Short Circuit Capability 11:Gate2:CollectorApplications 3:Emitter34:Collector General Purpose Inverter 4Specifications DPAKAbsolute Maximum Ratings at Ta=25C, Unless otherwise specified CASE 369C21Parameter Symbol Value Unit 3V Collector to Emitter Voltage VCES 600V Gate to Emitter Voltage VGES 20Marking Diagram A Collector Current (DC) @Tc=25C *2 20IC *1 A Limited by Tjmax @Tc=100C *2 10Collector Current (Peak) A ICP 40Pulse width Llimited by Tjmax IO 10 ADiode Average Output Current Power Dissipation PD

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