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NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 30 A, 600 V Optimized for High Speed Switching VCEsat = 1.65 V 5 ms Short-Circuit Capability These are Pb-Free Devices C Typical Applications Power Factor Correction Solar Inverters G Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collector-emitter voltage VCES 600 V Collector current IC A @ TC = 25 C 60 @ TC = 100 C 30 Pulsed collector current, Tpulse ICM 120 A G TO-247 C limited by TJmax ... See More ⇒

 

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