View ngtg30n60flwg datasheet:

NGTG30N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation30 A, 600 V Optimized for High Speed SwitchingVCEsat = 1.65 V 5 ms Short-Circuit Capability These are Pb-Free DevicesCTypical Applications Power Factor Correction Solar InvertersG Uninterruptable Power Supply (UPS)ABSOLUTE MAXIMUM RATINGS ERating Symbol Value UnitCollector-emitter voltage VCES 600 VCollector current IC A@ TC = 25C 60@ TC = 100C 30Pulsed collector current, Tpulse ICM 120 A GTO-247Climited by TJmax

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