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Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting 5.0 0.2 4.0 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 25 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V 1 2 3 1 Emitter Peak collector current ICP 1 A 2 Collector 3 Base Collector current IC 0.5 A 2.54 0.15 JEDEC TO 92 Collector power dissipation PC 600 mW EIAJ SC 43A Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, ... See More ⇒

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