2sd1302.pdf datasheet:

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 25 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 12 V1 2 3 1:EmitterPeak collector current ICP 1 A2:Collector3:BaseCollector current IC 0.5 A2.54 0.15JEDEC:TO92Collector power dissipation PC 600 mWEIAJ:SC43AJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector cutoff current ICBO VCB = 25V,